| IS42S16100-7TL |
ISSI/矽成 |
SDRAM |
70
|
SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 1170 pcs |
| IS42S16100H-7TLI |
ISSI/矽成 |
SDRAM |
4,522
|
SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1170 pcs |
| IS66WVO8M8DALL-200BLI |
ISSI/矽成 |
SRAM-PSEUDO |
15
|
SRAM-PSEUDO / 8MX8 PSRAM / TFBGA-24 / 200 MHZ / -40 C~+85 C / RoHS / 1.70-1.95V |
| IS45S16800J-6TLA1 |
ISSI/矽成 |
SDRAM |
6,229
|
SDRAM / 8MX16 SD / TSOP2(54) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| EDS1232AASE-60TT-E |
MICRON/美光 |
SDRAM |
1
|
SDRAM / 4MX32 SD / FBGA-90 / 166 MHZ / -20 ~+85 / RoHS / 3.3 V / TRAY / EOL / 1045 pcs 1.2 kg 37*17.5*8 cm |
| EDS1232AASE-75L-E |
MICRON/美光 |
SDRAM |
4,958
|
SDRAM / 4MX32 SD / FBGA-90 / 133 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 1045 pcs 1.25 kg 37*8*8 cm |
| A29040BL-55UF |
AMIC/聯笙 |
FLASH-NOR |
3,240
|
FLASH-NOR / 29F040 / PLCC-32 / 55 NS / -40 C~+85 C / RoHS / 5.0 V / TUBE / 3000 pcs 5.5 kg 10*10-59 cm |
| IC42S16100H-7TL |
ISSI/矽成 |
SDRAM |
286
|
SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / EOL |
| IS43R16320F-6BLI |
ISSI/矽成 |
DDR1 SDRAM |
2,148
|
DDR1 SDRAM / 32MX16 DDR1 / BGA-60 / 166 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY / 190 pcs |
| IS43DR16320E-25DBL |
ISSI/矽成 |
DDR2 SDRAM |
213
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / 2090 pcs |
| IS49NLC36800-25WBLI |
ISSI/矽成 |
RLDRAM2 |
34
|
RLDRAM2 / 8MX36 RLD2 / WBGA-144 / 400 MHZ / -40 C~+85 C / RoHS / 1.5V/1.8V / TRAY / 1040 pcs |
| IS42SM16200D-75BLI |
ISSI/矽成 |
SDRAM MOBILE |
1,674
|
SDRAM MOBILE / 2MX16 SD / FBGA-54 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS42S32200E-6TLI |
ISSI/矽成 |
SDRAM |
1
|
SDRAM / 2MX32 SD / TSOP2(86) / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 108 pcs |
| IS42SM16400K-75BLI |
ISSI/矽成 |
SDRAM MOBILE |
1,671
|
SDRAM MOBILE / 4MX16 SD / FBGA-54 / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 348 pcs |
| IS42S16320D-6TL |
ISSI/矽成 |
SDRAM |
396
|
SDRAM / 32MX16 SD / TSOP2(54) / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| IS45S16100E-7TLA1 |
ISSI/矽成 |
SDRAM |
576
|
SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS45S16320F-7CTLA1 |
ISSI/矽成 |
SDRAM |
715
|
SDRAM / 32MX16 SD / TSOP2(54) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IC42S16100H-6TL |
ISSI/矽成 |
SDRAM |
1
|
SDRAM / 1MX16 SD / TSOP2(50) / 166 MHZ / 0 C~+85 C / RoHS / 3.3 V / EOL |
| IS45S16160D-7BLA2 |
ISSI/矽成 |
SDRAM |
15,616
|
SDRAM / 16MX16 SD / FBGA-54 / 143 MHZ / -40 C~+105 C / RoHS / 3.3 V / TRAY / EOL |
| R1LV0408DSP-5SI#B0 |
RENESAS/瑞萨 |
SRAM-ASYNC |
9
|
SRAM-ASYNC / 512KX8 ASYNC / SOP-32 / 55 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TUBE / EOL / 900 pcs 2.6 kg 58*14*7 cm |
| IS43R16320E-5BI |
ISSI/矽成 |
DDR1 SDRAM |
495
|
DDR1 SDRAM / 32MX16 DDR1 / FBGA-60 / 200 MHZ / -40 C~+85 C / Leaded / 2.5 V / EOL |
| IS46LR16320C-6BLA1 |
ISSI/矽成 |
LPDDR1 MOBILE |
14,619
|
LPDDR1 MOBILE / 32MX16 LPDDR1 / FBGA-60 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / 300 pcs |
| IS43LR16320B-6BLI |
ISSI/矽成 |
LPDDR1 MOBILE |
21,687
|
LPDDR1 MOBILE / 32MX16 LPDDR1 / FBGA-60 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 3000 pcs |
| V62C51864L-35P |
MOSEL-VITELIC |
SRAM-ASYNC |
32,507
|
SRAM-ASYNC / 8KX8 ASYNC / PDIP-28 / 35 NS / 0 C~+70 C / Leaded / 5.0 V / TUBE / EOL / 650 pcs 5.0 kg 24*8*51 cm |
| AT25256W-10SI |
MICROCHIP/微芯 |
EEPROM-SPI |
3,049
|
EEPROM-SPI / 256K SPI-EEPROM / SOIC-8 / -40 C~+85 C / Leaded / 4.5V-5.5V / TUBE / 94 pcs |