| IDT71V016SA10PH |
RENESAS/瑞萨 |
SRAM-ASYNC |
651
|
SRAM-ASYNC / 64KX16 ASYNC / TSOP2(44) / 10 NS / 0 C~+70 C / Leaded / 3.3 V / TUBE |
| GRM42-2X5R106M010AL |
MURATA/村田 |
CAPACITOR |
96
|
CAPACITOR / 2X5R106 / Leaded |
| AR5111A-00 |
ATHEROS |
ETHERNET IC |
144
|
ETHERNET IC / AR5111 / QFN / Leaded |
| AR5213A-00 |
ATHEROS |
NETWORK ICS |
167
|
NETWORK ICS / AR5213 / Leaded |
| AR2111 |
ATHEROS |
|
139
|
AR2111 / Leaded |
| AR2313A-001 |
ATHEROS |
ETHERNET IC |
5
|
ETHERNET IC / AR2313 / Leaded |
| PC87307IBY/VUL |
TEXAS/TI/德仪 |
PROCESSOR |
3
|
PROCESSOR / PC87307 / QFP / Leaded |
| MMC-254-12.352MHZ |
PANASONIC |
OTHER |
2,050
|
OTHER / MMC25412 / Leaded |
| M11L416256SA-35T |
ESMT/EMP/晶豪 |
DRAM |
5
|
DRAM / 256KX16 EDO / TSOP2(40/44) / 35 NS / 0 C~+85 C / Leaded / 3.3 V |
| 30905R |
MIDCOM |
OTHER |
3,660
|
OTHER / 30905 / Leaded |
| IC42S16400-6T |
ISSI/矽成 |
SDRAM |
15
|
SDRAM / 4MX16 SD / TSOP2(54) / 166 MHZ / 0 C~+85 C / Leaded / 3.3 V / TRAY / EOL / 1080 pcs 2.0 kg 37X16X9 cm |
| IS64LV25616AL-12TLA3 |
ISSI/矽成 |
SRAM-ASYNC |
15
|
SRAM-ASYNC / 256KX16 ASYNC / TSOP2(44) / 12 NS / -40 C~+125 C / RoHS / 3.3 V / TRAY / 1.5 kg 36*16*9 cm |
| SD12H0SKR |
C&K |
SWITCH |
327
|
SWITCH / 12H0 / Leaded |
| K9F1G08U0C-PIB0000 |
SAMSUNG/三星 |
FLASH-NAND |
3
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / EOL / 960 pcs 2.5 kg 38*19*11 cm |
| RM73B2AT131J |
KOA |
RESISTOR |
111,418
|
RESISTOR / 73B2 / SMD / Leaded / TAPE ON REEL |
| SSW-101-01-S-D |
SAMTEC |
SOCKET |
349
|
SOCKET / SSW10101 / Leaded |
| SCM6202-JL-CAN |
SUMITOMO |
TRANSCEIVER |
2
|
TRANSCEIVER / SCM6202 / Leaded |
| IS61C5128AL-10KLI |
ISSI/矽成 |
SRAM-ASYNC |
7
|
SRAM-ASYNC / 512KX8 ASYNC / SOJ-36 / 10 NS / -40 C~+85 C / RoHS / 5.0 V / TUBE / EOL / 800 pcs |
| 9861577-001 |
AVX |
OTHER |
4,000
|
OTHER / 9861577 / Leaded |
| IS61LV6464-100TQ |
ISSI/矽成 |
SRAM-ASYNC |
15
|
SRAM-ASYNC / 64KX64 ASYNC / TQFP-128 / 10 NS / 0 C~+70 C / Leaded / 3.3 V |
| IS61C256AH-15J |
ISSI/矽成 |
SRAM-ASYNC |
15
|
SRAM-ASYNC / 32KX8 ASYNC / SOJ-28 / 15 NS / 0 C~+70 C / Leaded / 5.0 V |
| IC41C16105S-50K |
ISSI/矽成 |
DRAM |
7
|
DRAM / 1MX16 FP / SOJ-42 / 50 NS / -40 C~+85 C / Leaded / 5.0 V / EOL |
| IS62C256-70U |
ISSI/矽成 |
SRAM-ASYNC |
15
|
SRAM-ASYNC / 32KX8 ASYNC / SOP-28 / 70 NS / 0 C~+70 C / Leaded / 5.0 V |
| K9F1G08U0C-PCB0000 |
SAMSUNG/三星 |
FLASH-NAND |
5
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 25 NS / 0 C~+70 C / RoHS / 2.7V~3.6V / TRAY / EOL / 960 pcs 2.4 kg 38*19*11 cm |
| GM71C18163CT-6DR |
SK HYNIX/海力士 |
DRAM |
1,000
|
DRAM / 1MX16 EDO / TSOP2(44/50) / 0 C~+70 C / Leaded / 5.0 V / TAPE ON REEL / EOL / 1000 pcs 1.46 kg 36*36*7 cm |