H5AN4G8NAFR-TRC

產品概述

IC Picture

圖片僅供參考

製造商IC編號 H5AN4G8NAFR-TRC
廠牌 SK HYNIX/海力士
IC 類別 DDR4 SDRAM
IC代碼 512MX8 DDR4

產品詳情

脚位/封装 FBGA-78
外包裝 TRAY
無鉛/環保 無鉛/環保
電壓(伏) 1.2 V
溫度規格 0 C~+85 C
速度
標準包裝數量
標準外箱
Number Of Words 512M
Bit Organization x8
Density 4G
Operating Temperature commercial temperature(0°C ~ 85°C) & normal power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 2nd
No Of Banks Non-TSV
Product Family DRAM
Shipping Method tray

Description The H5AN4G4NAFR-xxC, H5AN4G8NAFR-xxC and H5AN4G6NAFR-xxC are a 4Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 4Gb DDR4 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.