H5TC4G63MFR-PBI

產品概述

IC Picture

圖片僅供參考

製造商IC編號 H5TC4G63MFR-PBI
廠牌 SK HYNIX/海力士
IC 類別 DDR3L SDRAM
IC代碼 256MX16 DDR3L

產品詳情

脚位/封装 FBGA-96
外包裝 TRAY
無鉛/環保 無鉛/環保
電壓(伏) 1.35V
溫度規格 -40 C~+95 C
速度 1600 MBPS
標準包裝數量
標準外箱
Number Of Words 256M
Bit Organization x16
Density 4G
Operating Temperature industrial temperature(-40°C~85°C) & normal power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 1st
No Of Banks 8 banks
Product Family DRAM
Shipping Method tray

Description The H5TC4G83MFR-xxA(I) and H5TC4G63MFR-xxA(I) are a 4Gb low power Double Data Rate III (DDR3L) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density, high bandwidth and low power operation at 1.35V. SK Hynix DDR3L SDRAM provides backward compatibility with the 1.5V DDR3 based environment without any changes. (Please refer to the SPD information for details.) SK Hynix 4Gb DDR3L SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the clock (falling edges of the clock), data, data strobes and write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

FFFE/互通料號 (形式,腳位和功能對等)

IC 編號 脚位/封装 電壓(伏) 速度 溫度規格
AS4C256M16D3L-12BIN FBGA-96 1.35V 1600 MBPS -40 C~+95 C
AS4C256M16D3LA-12BIN FBGA-96 1.35V 1600 MBPS -40 C~+95 C
AS4C256M16D3LB-12BIN FBGA-96 1.35V 1600 MBPS -40 C~+95 C
AS4C256M16D3LB-12BINTR FBGA-96 1.35V 1600 MBPS -40 C~+95 C
H5TC4G63AFR-PBI FBGA-96 1.35V 1600 MBPS -40 C~+95 C
H5TC4G63CFR-PBI FBGA-96 1.35V 1600 MBPS -40 C~+95 C
H5TC4G63EFR-PBI FBGA-96 1.35V 1600 MBPS -40 C~+95 C
IS43TR16256AL-125KBLI-TR BGA-96 1.35V/1.5V 1600 MBPS -40 C~+95 C
IS43TR16256AL-125KBLI-TR 1 BGA-96 1.35V/1.5V 1600 MBPS -40 C~+95 C
IS43TR16256BL-125KBLI-T BGA-96 1.35V/1.5V 1600 MBPS -40 C~+95 C