H5TQ4G83AFR-PBI
產品概述
圖片僅供參考
| 製造商IC編號 | H5TQ4G83AFR-PBI |
| 廠牌 | SK HYNIX/海力士 |
| IC 類別 | DDR3L SDRAM |
| IC代碼 | 512MX8 DDR3 |
| 共通IC編號 | H5TQ4G83AFR-PBIR |
產品詳情
| 脚位/封装 | FBGA-78 |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.5 V |
| 溫度規格 | -40 C~+95 C |
| 速度 | 1600 MBPS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 512M |
| Bit Organization | x8 |
| Density | 4G |
| Operating Temperature | industrial temperature(-40°C~85°C) & normal power |
| Package Material | lead & halogen free(ROHS compliant) |
| Hynix Memory | H |
| Die Generation | 2nd |
| No Of Banks | 8 banks |
| Product Family | DRAM |
| Shipping Method | tray |
Description The H5TQ4G43AFR-xxC, H5TQ4G83AFR-xxC and H5TQ4G63AFR-xxC are a 4Gb CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. 4Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| H5TQ4G83AFR-PBJ | FBGA-78 | 1.5 V | 1600 MBPS | -40 C~+95 C |
| H5TQ4G83MFR-PBCBID | FBGA-78 | 1.5 V | 1600 MBPS | -40 C~+95 C |
| H5TQ4G83MFR-PBI | FBGA-78 | 1.5 V | 1600 MBPS | -40 C~+95 C |
| IS43TR85120A-125KB | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+95 C |
| IS43TR85120A-125KBA1 | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+95 C |
| IS43TR85120A-125KBI | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+95 C |
| IS43TR85120A-125KBL-TR | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+95 C |
| IS43TR85120A-125KBLC | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+95 C |
| IS43TR85120A-125KBLI-TR | BGA-78 | 1.5 V | 1600 MBPS | -40 C~+95 C |
| IS43TR85120AL-125KBA1 | BGA-78 | 1.35V/1.5V | 1600 MBPS | -40 C~+95 C |