| 脚位/封装 | TSOP2(86) |
| 外包裝 | TRAY |
| 無鉛/環保 | 含鉛 |
| 電壓(伏) | 3.3 V |
| 溫度規格 | 0 C~+70 C |
| 速度 | 143 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Density | 64M |
| Package Material | normal |
| Hynix Memory | HY |
| Die Generation | 4th Gen. |
| No Of Banks | 4 banks |
| Power Consumption | normal power |
| Shipping Method | tray |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| ABS2M32SD-7R | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| AS4C2M32S-7TCN | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| AS4C2M32SA-7TCN | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325-7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325TS-6/7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325TS-7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325TS-7 DC:2010 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325TS7G | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| EM638325TS7G-DR | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |
| HY57V643220-7 | TSOP2(86) | 3.3 V | 143 MHZ | 0 C~+70 C |