| 脚位/封装 | FBGA-90 |
| 外包裝 | TRAY |
| 無鉛/環保 | 含鉛 |
| 電壓(伏) | 3.3 V |
| 溫度規格 | 0 C~+70 C |
| 速度 | 133 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 4M |
| Bit Organization | x32 |
| Density | 128M |
| Package Material | normal |
| Hynix Memory | HY |
| Die Generation | 1st Gen. |
| Power Consumption | normal |
| Shipping Method | tray |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EDS1232AABB-75 | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1232AABB-75E | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1232AABB-75LU-E | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1232AABB75LE | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1232AASE-75 | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1232AASE-75-E | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1232AASE-75-E PB FREE | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1232AASE-75E OR | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1232AASE-75L-E | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |
| EDS1232CABB75E | FBGA-90 | 3.3 V | 133 MHZ | 0 C~+70 C |