IS61QDB42M18C-300B4
產品概述
圖片僅供參考
| 製造商IC編號 | IS61QDB42M18C-300B4 |
| 廠牌 | ISSI/矽成 |
| IC 類別 | SRAM-DDR2 |
| IC代碼 | 2MX18 QDB |
| 共通IC編號 | IS61QDB42M18C-300B4-TR |
產品詳情
| 脚位/封装 | FBGA-165 |
| 外包裝 | |
| 無鉛/環保 | 含鉛 |
| 電壓(伏) | 1.8 V |
| 溫度規格 | -40 C~+125 C |
| 速度 | 300 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 2M |
| Bit Organization | x18 |
| Density | 36M |
| Odt Option | No ODT |
| Configuration | 2M x18 |
| Product Type | QUAD |
| Issi Designator | IS |
| Rohs Version | Leaded |
| Burst Type | Burst 4 |
| Die Rev | C |
| Read Latency | 1.5 clock cycles or 2.5 clock cycles |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| IS61QDB42M18A-300B4 | FBGA-165 | 1.8 V | 300 MHZ | -40 C~+125 C |
| IS61QDB42M18A-300B4-TR | FBGA-165 | 1.8 V | 300 MHZ | -40 C~+125 C |
| IS61QDB42M18A-300B4I | FBGA-165 | 1.8 V | 300 MHZ | -40 C~+125 C |
| IS61QDB42M18A-300B4I-TR | FBGA-165 | 1.8 V | 300 MHZ | -40 C~+125 C |
| IS61QDB42M18A-300B4L-TR | FBGA-165 | 1.8 V | 300 MHZ | -40 C~+125 C |
| IS61QDB42M18A-300B4LI-TR | FBGA-165 | 1.8 V | 300 MHZ | -40 C~+125 C |
| IS61QDB42M18A-300M3 | FBGA-165 | 1.8 V | 300 MHZ | -40 C~+125 C |
| IS61QDB42M18A-300M3-TR | FBGA-165 | 1.8 V | 300 MHZ | -40 C~+125 C |
| IS61QDB42M18A-300M3I | FBGA-165 | 1.8 V | 300 MHZ | -40 C~+125 C |
| IS61QDB42M18A-300M3I-TR | FBGA-165 | 1.8 V | 300 MHZ | -40 C~+125 C |