圖片僅供參考
| 製造商IC編號 | K4B1G1646I-BMMA |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR3L SDRAM |
| IC代碼 | 64MX16 DDR3L |
| 共通IC編號 | K4B1G1646I-BMMA0 |
| K4B1G1646I-BMMA000 | |
| K4B1G1646I-BMMA0CV | |
| K4B1G1646I-BMMAT00 | |
| K4B1G1646I-BMMATCV |
| 脚位/封装 | FBGA-96 |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.35V |
| 溫度規格 | -40 C~+95 C |
| 速度 | 1866 MBPS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 10th Generation |
| IC 編號 | 數量 | 生產年份 | |
|---|---|---|---|
| K4B1G1646I-BMMA | 2,000 | 21+ | 索取報價 |
| K4B1G1646I-BMMA | 10,240 | DC22+ | 索取報價 |
| K4B1G1646I-BMMA | 5,000 | 索取報價 | |
| K4B1G1646I-BMMA000 | 5,000 | 2131 | 索取報價 |
| K4B1G1646I-BMMATCV | 30,000 | 2152/22+ | 索取報價 |
| K4B1G1646I-BMMATCV | 0 | 索取報價 | |
| K4B1G1646I-BMMA | 10,000 | 索取報價 | |
| K4B1G1646I-BMMA | 6,000 | 索取報價 | |
| K4B1G1646I-BMMATCV | 10,000 | 21+ | 索取報價 |
| K4B1G1646I-BMMA | 174 | 21+ | 索取報價 |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| MT41K64M16TW-107AIT:J | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EM6HC16EWBH-10IH | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| IS43TR16640BL-107MBLI-TR | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| IS43TR16640CL-107MBA1 | FBGA-96 | 1.35 V | 1866 MBPS | -40 C~+95 C |
| IS43TR16640CL-107MBLI-BM | FBGA-96 | 1.35 V | 1866 MBPS | -40 C~+95 C |
| IS43TR16640CL-107MBLI-TR | FBGA-96 | 1.35 V | 1866 MBPS | -40 C~+95 C |
| K4B1G1646I-BMMA0CV SAM | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| MT41K64M16TW-10 7 IT:J | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| MT41K64M16TW-107 AIT:J TR | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| MT41K64M16TW-107 IT: | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
| MT41K64M16TW-107 IT:J | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |