圖片僅供參考
| 製造商IC編號 | K4B2G1646F-BYMA TC |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR3L SDRAM |
| IC代碼 | 128MX16 DDR3L |
| 脚位/封装 | FBGA-96 |
| 外包裝 | TAPE ON REEL |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.35 V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 標準包裝數量 | 2000 |
| 標準外箱 | |
| Number Of Words | 128M |
| Bit Organization | x16 |
| Density | 2G |
| Internal Banks | 8 Banks |
| Power | Low VDD(1.35V) |
| Generation | 7th Generation |
| IC 編號 | 數量 | 生產年份 | |
|---|---|---|---|
| K4B2G1646F-BYMA TC | 10,000 | 索取報價 |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EM6HD16EWBH-10H | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| EM6HD16EWBH-10H(TRAY) | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| F60C1A0002-M6AR | FBGA-96 | 1.35 V | 1866 MBPS | 0 C~+85 C |
| H5TC2G63DFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC2G63FFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC2G63GFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC2G63GFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC2G63GFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| IS43TR16128BL-107MB | FBGA-96 | 1.35 V | 1866 MBPS | 0 C~+85 C |
| IS43TR16128BL-107MBL | FBGA-96 | 1.35 V | 1866 MBPS | 0 C~+85 C |