圖片僅供參考
製造商IC編號 | K4B2G1646F-BYMAO |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR3L SDRAM |
IC代碼 | 128MX16 DDR3L |
脚位/封装 | FBGA-96 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.35V |
溫度規格 | 0 C~+85 C |
速度 | 1866 MBPS |
標準包裝數量 | 1120 |
標準外箱 | |
Number Of Words | 128M |
Bit Organization | x16 |
Density | 2G |
Internal Banks | 8 Banks |
Generation | 7th Generation |
Power | Low VDD(1.35V) |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4B2G1646F-BYMAO | 51,200 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
K4B2G1646F-BYMA0CV | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B2G1646F-BYMAT00 | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B2G1646F-BYMATCV | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B2G1646F-BYMATSG | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
K4B2G1646I-BYMA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107 | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107 ES:K | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107:G | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107:K | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
MT41K128M16JT-107:K TR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |