圖片僅供參考
製造商IC編號 | K4B4G0846E-BMM0 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR3L SDRAM |
IC代碼 | 512MX8 DDR3L |
脚位/封装 | FBGA-78 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.35V |
溫度規格 | -40 C~+95 C |
速度 | 1866 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Low VDD(1.35V) |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
MT41K512M8DA-107 AIT:P TR | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8DA-107 AIT:R | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8DA-107 IT ES:P | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8DA-107 IT:P | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8DA-107 IT:P | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8DA-107 IT:PTR | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8DA-107 IT:R | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8DA-107 M AIT ES:P | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8DA-107 XIT:P TR | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K512M8DA-107 XIT:R | FBGA-78 | 1.35V | 1866 MBPS | -40 C~+95 C |