圖片僅供參考
製造商IC編號 | K4B4G1646D-BFMA03V |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR3 SDRAM |
IC代碼 | 256MX16 DDR3 |
脚位/封装 | FBGA-96 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.35V |
溫度規格 | -40 C~+95 C |
速度 | 1866 MBPS |
標準包裝數量 | 1120 |
標準外箱 | |
Number Of Words | 256M |
Bit Organization | x16 |
Density | 4G |
Internal Banks | 8 Banks |
Generation | 5th Generation |
Power | Low, i-TCSR & PASR & DS |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
D2516ECMDXGJDI-R | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
D2516ECMDXGJDI-U | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
IS43TR16256AL-107MBA1 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
IS43TR16256BL-107MBA1 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
IS43TR16256BL-15HBLI-TR | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
IS43TR16256ECL-107NBA1 | BGA-96 | 1.35V/1.5V | 1866 MBPS | -40 C~+95 C |
K4B4G1646D-BFMA | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
K4B4G1646D-BFMAT3V | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K256M16HA-107 AIT ES:E | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |
MT41K256M16HA-107 AIT:E | FBGA-96 | 1.35V | 1866 MBPS | -40 C~+95 C |