K4B4G1646E-BYK0/BCMA
產品概述
圖片僅供參考
| 製造商IC編號 | K4B4G1646E-BYK0/BCMA |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR3L SDRAM |
| IC代碼 | 256MX16 DDR3L |
產品詳情
| 脚位/封装 | FBGA-96 |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.35V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 1866 MBPS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Low VDD(1.35V) |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EM6HE16EWAKG-10H | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63AFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDAR | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63CFR-RDC | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63EFR-PBA/RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63EFR-RDA | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |
| H5TC4G63EFR-RDA 2.9USD | FBGA-96 | 1.35V | 1866 MBPS | 0 C~+85 C |