K4E151611D-JI50
產品詳情
| 脚位/封装 | SOJ-42 |
| 外包裝 | TRAY |
| 無鉛/環保 | 含鉛 |
| 電壓(伏) | 5.0 V |
| 溫度規格 | -40 C~+85 C |
| 速度 | 50 NS |
| 標準包裝數量 | |
| 標準外箱 | |
| Bit Organization | x16 |
| Generation | 5th Generation |
| Power | Normal Power |
DESCRIPTION This is a family of 1,048,576 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self- refresh operation is available in L-version. This 1Mx16 EDO Mode DRAM family is fabricated using Samsung′ s advanced CMOS pro- cess to realize high band-width, low power consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| AS4C1M16E5-50JI | SOJ-42 | 5.0 V | 50 NS | -40 C~+85 C |
| AS4C1M16E5-50JIN | SOJ-42 | 5.0 V | 50 NS | -40 C~+85 C |
| AS4C1M16EO-50JI | SOJ-42 | 5.0 V | 50 NS | -40 C~+85 C |
| AS4C1M16EO-50JIN | SOJ-42 | 5.0 V | 50 NS | -40 C~+85 C |
| IC41C16100-50KI | SOJ-42 | 5.0 V | 50 NS | -40 C~+85 C |
| IC41C16100A-50KI | SOJ-42 | 5.0 V | 50 NS | -40 C~+85 C |
| IC41C16100S-50KI | SOJ-42 | 5.0 V | 50 NS | -40 C~+85 C |
| IC41C16100S-50KIG | SOJ-42 | 5.0 V | 50 NS | -40 C~+85 C |
| IS41C16100-50KI | SOJ-42 | 5.0 V | 50 NS | -40 C~+85 C |
| IS41C16100-50KIX | SOJ-42 | 5.0 V | 50 NS | -40 C~+85 C |