K4H510838B-TICC
產品概述
圖片僅供參考
| 製造商IC編號 | K4H510838B-TICC |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR1 SDRAM |
| IC代碼 | 64MX8 DDR1 |
產品詳情
| 脚位/封装 | TSOP2(66) |
| 外包裝 | |
| 無鉛/環保 | 含鉛 |
| 電壓(伏) | 2.5 V |
| 溫度規格 | -40 C~+85 C |
| 速度 | 200 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 3rd Generation |
| Power | Normal Power |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EDD5108AGTA-5BLI-E | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| EDD5108AGTA-5CLI-E | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R86400D -5TI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R86400D -5TLA1 | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R86400D-5TLI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R86400E -5TI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R86400E -5TLA1 | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R86400E-5TLI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R86400F -5TI | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |
| IS43R86400F -5TLA1 | TSOP2(66) | 2.5 V | 200 MHZ | -40 C~+85 C |