圖片僅供參考
| 製造商IC編號 | K4H510838B-UCB3 |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR1 SDRAM |
| IC代碼 | 64MX8 DDR1 |
| 共通IC編號 | K4H510838BUCB3000 |
| 脚位/封装 | TSOP2(66) |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 2.5 V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 166 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 3rd Generation |
| IC 編號 | 數量 | 生產年份 | |
|---|---|---|---|
| K4H510838B-UCB3 | 15,000 | 09+ | 索取報價 |
| K4H510838B-UCB3 | 8,564 | 09+ | 索取報價 |
| K4H510838B-UCB3 | 1,478 | 2007+ | 索取報價 |
| K4H510838B-UCB3 | 8,564 | 2009+ | 索取報價 |
| K4H510838B-UCB3 | 13,500 | 索取報價 | |
| K4H510838B-UCB3 | 42 | 索取報價 | |
| K4H510838B-UCB3 | 10,560 | 索取報價 | |
| K4H510838B-UCB3 | 13,440 | 2004 | 索取報價 |
| K4H510838B-UCB3 | 13,440 | 索取報價 | |
| K4H510838B-UCB3 | 20,000 | 04 | 索取報價 |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| IS43R86400D-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400D-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400D-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400E-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400E-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400E-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400F-6T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400F-6TL | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| IS43R86400F-6TL-TR | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
| K4H5108383M-TCB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |