圖片僅供參考
| 製造商IC編號 | K4H510838D-UIB3 |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR1 SDRAM |
| IC代碼 | 64MX8 DDR1 |
| 脚位/封装 | TSOP2(66) |
| 外包裝 | |
| 無鉛/環保 | 含鉛 |
| 電壓(伏) | 2.5 V |
| 溫度規格 | -40 C~+85 C |
| 速度 | 166 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 5th Generation |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EDD5108AGTA-6BLI-E | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R86400D-6TI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R86400D-6TLA1 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R86400D-6TLI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R86400E-6TI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R86400E-6TLA1 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R86400E-6TLI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R86400F-6TI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R86400F-6TLA1 | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |
| IS43R86400F-6TLI | TSOP2(66) | 2.5 V | 166 MHZ | -40 C~+85 C |