圖片僅供參考
製造商IC編號 | K4H511638J-LLB3 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR1 SDRAM |
IC代碼 | 32MX16 DDR1 |
脚位/封装 | TSOP2(66) |
外包裝 | |
無鉛/環保 | 含鉛 |
電壓(伏) | 2.5 V |
溫度規格 | 0 C~+85 C |
速度 | 166 MHZ |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Low Power |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4H511638J-LLB3 | 2,000 | 2010+ | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
K4H511638D-UC/LB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H511638D-UCB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H511638D-UCB3 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H511638D-UCB3000 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H511638D-UCB3000 SAM 14 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H511638D-UCB30RA | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H511638D-UCB3512MBIT | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H511638D-UCB3NY | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H511638D-UCB3T | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |
K4H511638D-UCB3T00 | TSOP2(66) | 2.5 V | 166 MHZ | 0 C~+85 C |