圖片僅供參考
| 製造商IC編號 | K4H641638Q-LCCC |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR1 SDRAM |
| IC代碼 | 4MX16 DDR1 |
| 脚位/封装 | TSOP2(66) |
| 外包裝 | |
| 無鉛/環保 | 含鉛 |
| 電壓(伏) | 2.5 V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 200 MHZ |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 4M |
| Bit Organization | x16 |
| Density | 64M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 17th Generation |
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| IS43R16400B-5TL | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| IS43R16400B-5TL-TR | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LC OR LCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LC/LCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCCC | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCCC-LOT 9 | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCCCT | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCCCT00 | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |
| K4H641638N-LCCCTSG | TSOP2(66) | 2.5 V | 200 MHZ | 0 C~+85 C |