脚位/封装 | TSOP2(86) |
外包裝 | TRAY |
無鉛/環保 | 含鉛 |
電壓(伏) | 3.3 V |
溫度規格 | 0 C~+85 C |
速度 | 166 MHZ |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 2M |
Bit Organization | x32 |
Density | 64M |
Internal Banks | 4 Banks |
Generation | 9th Generation |
Power | Low Power |
GENERAL DESCRIPTION The K4S643232H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clo ck cycle. Range of operating frequencies, programmable burs t length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4S643232H-TL60 | 7,000 | 2009+ | 索取報價 |
K4S643232H-TL60 | 2,548 | 2007+ | 索取報價 |
K4S643232H-TL60 | 6,000 | 索取報價 | |
K4S643232H-TL60 | 7,000 | 索取報價 | |
K4S643232H-TL60 | 12,000 | 索取報價 | |
K4S643232H-TL60 | 10,000 | 索取報價 | |
K4S643232H-TL60 | 5,000 | 2004 | 索取報價 |
K4S643232H-TL60 | 5,000 | 2003 | 索取報價 |
K4S643232H-TL60 | 5,000 | 索取報價 | |
K4S643232H-TL60 | 5,000 | 2004+ | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
IS42S32200C1-6TL-TR | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
IS42S32200C1TSOP2(86) | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
IS42S32200E-6 | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
IS42S32200E-6B-TR | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
IS42S32200E-6T | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
IS42S32200E-6T-TR | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
IS42S32200E-6TL | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
IS42S32200E-6TL-TR | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
IS42S32200E-6TLPBFREE | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |
IS42S32200E1-6TL | TSOP2(86) | 3.3 V | 166 MHZ | 0 C~+85 C |