K4T1G1646QF-BCE7
產品概述
圖片僅供參考
| 製造商IC編號 | K4T1G1646QF-BCE7 |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR2 SDRAM |
| IC代碼 | 64MX16 DDR2 |
產品詳情
| 脚位/封装 | FBGA-84 |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.8 V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 800 MBPS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 17th Generation |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| HYB18T1G160C2FL-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T1G160C4F-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18T1G160CFL-2.5 | TFBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160AF-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160BF-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160BF-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160C2F-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160C2F-25F | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160CF-2.5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |
| HYB18TC1G160CF-5 | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+85 C |