K4T1G164QE-BIE6
產品概述
圖片僅供參考
| 製造商IC編號 | K4T1G164QE-BIE6 |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR2 SDRAM |
| IC代碼 | 64MX16 DDR2 |
產品詳情
| 脚位/封装 | FBGA-84 |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.8 V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 667 MBPS |
| 標準包裝數量 | 1280 |
| 標準外箱 | |
| Number Of Words | 64M |
| Bit Organization | x16 |
| Density | 1G |
| Internal Banks | 8 Banks |
| Generation | 6th Generation |
| Power | Normal Power |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| K4T1G164QE-HCE60JR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE6: | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE6T | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE6T00 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE6T000 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HCE7/E6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HELE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HIE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HIE6000 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| K4T1G164QE-HLE6 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |