K4T51083QBGCD5
產品概述
圖片僅供參考
| 製造商IC編號 | K4T51083QBGCD5 |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR2 SDRAM |
| IC代碼 | 64MX8 DDR2 |
產品詳情
| 脚位/封装 | FBGA-60 |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.8 V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 533 MBPS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 64M |
| Bit Organization | x8 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Generation | 3rd Generation |
| Power | Normal Power |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| HY5PS12821PF-C4 | FBGA-60 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512800AC-3.7 | FBGA-60 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512800AF-37 | FBGA-60 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512800AFL-3.7 | FBGA-60 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512800ALF-3.7 | FBGA-60 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512800AT-3.7 | FBGA-60 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512800B2F-3.7 | FBGA-60 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512800B2FL-3.7 | FBGA-60 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512800B2FL-3S OR 3.7 | FBGA-60 | 1.8 V | 533 MBPS | 0 C~+85 C |
| HYB18T512800BC-3.7 | FBGA-60 | 1.8 V | 533 MBPS | 0 C~+85 C |