K4T51163QE-HCE6
產品概述
圖片僅供參考
| 製造商IC編號 | K4T51163QE-HCE6 |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | DDR2 SDRAM |
| IC代碼 | 32MX16 DDR2 |
| 共通IC編號 | K4T51163QE-HCE60 |
產品詳情
| 脚位/封装 | FBGA-84 |
| 外包裝 | |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 1.8 V |
| 溫度規格 | 0 C~+85 C |
| 速度 | 667 MBPS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 32M |
| Bit Organization | x16 |
| Density | 512M |
| Internal Banks | 4 Banks |
| Power | Normal Power |
| Generation | 6th Generation |
供應鏈有貨
| IC 編號 | 數量 | 生產年份 | |
|---|---|---|---|
| K4T51163QE-HCE6 | 5,500 | 索取報價 | |
| K4T51163QE-HCE6 | 20,000 | 2010+ | 索取報價 |
| K4T51163QE-HCE6 | 6,400 | 索取報價 | |
| K4T51163QE-HCE6 | 5,120 | 2010 | 索取報價 |
| K4T51163QE-HCE6 | 5,120 | 2010+ | 索取報價 |
| K4T51163QE-HCE6 | 20,000 | 索取報價 | |
| K4T51163QE-HCE6 | 5,120 | 索取報價 | |
| K4T51163QE-HCE6 | 10,000 | 索取報價 | |
| K4T51163QE-HCE6 | 10,000 | 索取報價 | |
| K4T51163QE-HCE6 | 0 | 索取報價 |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| EM68B16CWPA-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68B16CWPA-3H 512MB DDR2 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| EM68B16CWQC-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621AF-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621AF-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621AFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621AFP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621BEP-Y5 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621BFP-Y4 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
| HY5PS121621BFP-Y5-C | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |