圖片僅供參考
製造商IC編號 | K4T51163QG-HCE6 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 32MX16 DDR2 |
共通IC編號 | K4T51163QG-HCE60 |
K4T51163QG-HCE600 | |
K4T51163QG-HCE600/T00 | |
K4T51163QG-HCE6000 | |
K4T51163QG-HCE60CV | |
K4T51163QG-HCE60T00 | |
K4T51163QG-HCE6: | |
K4T51163QG-HCE6T | |
K4T51163QG-HCE6T00 | |
K4T51163QG-HCE6T000 |
脚位/封装 | FBGA-84 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | 0 C~+85 C |
速度 | 667 MBPS |
標準包裝數量 | 1280 |
標準外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 8th Generation |
Power | Normal Power |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K4T51163QG-HCE6 | 2,451 | 索取報價 | |
K4T51163QG-HCE60CV | 6,500 | 索取報價 | |
K4T51163QG-HCE6T00 | 4,000 | 索取報價 | |
K4T51163QG-HCE6 | 158 | 0928+ | 索取報價 |
K4T51163QG-HCE6 | 3,456 | 09+ | 索取報價 |
K4T51163QG-HCE6 | 2,852 | 09+ | 索取報價 |
K4T51163QG-HCE6 | 110 | 09+10+ | 索取報價 |
K4T51163QG-HCE6 | 2,698 | 索取報價 | |
K4T51163QG-HCE6 | 1,356 | 索取報價 | |
K4T51163QG-HCE6 | 32 | 200931 | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
MT47H32M16GC-3:B | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16GC-5E:B | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16GC37E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16GC5E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25 ES:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25 ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-25:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |