圖片僅供參考
製造商IC編號 | K4T51163QJ-BCE6TCV DC:1 YR |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 32MX16 DDR2 |
脚位/封装 | FBGA-84 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | 0 C~+85 C |
速度 | 667 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 11th Generation |
Power | Normal Power |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
MT47H32M16HR-3TR:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-5E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-5E ES:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR-5E:F | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR25EGTR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR31T | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HR3:FFBGA84T R | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25 ES:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H32M16HW-25:G | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |