K9F1208B0C

GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. I ts NAND cell provides the most cost-effective solutIon for thesolid state mass storage market. A program operation can be performed in typical 200µs on the 528-bytes and an erase operation can be performed in ty pical 2ms on a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functi ons including pulse repetition, where required, and internal verifica- tion and margining of data. Even the write-intens ive systems can take advantage of the K9F1208X0C ′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.