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製造商IC編號 | K9F1208Q0C-DCBO |
廠牌 | SAMSUNG/三星 |
IC 類別 | FLASH-NAND |
IC代碼 | 64MX8 NAND SLC |
脚位/封装 | TBGA-63 |
外包裝 | TRAY |
無鉛/環保 | 含鉛 |
電壓(伏) | 1.8 V |
溫度規格 | 0 C~+70 C |
速度 | |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 64M |
Bit Organization | x8 |
Density | 512M |
Generation | 4th Generation |
Pre Prog Version | Serial |
Classification | SLC Normal |
Cust Bad Block | Include Bad Block |
Mode | Normal |
GENERAL DESCRIPTION Offered in 64Mx8bits, the K9F1208X0C is 512Mbit with spare 16Mbit capacity. The device is offered in 1.8V, 2.7V and 3.3V Vcc. I ts NAND cell provides the most cost-effective solutIon for thesolid state mass storage market. A program operation can be performed in typical 200µs on the 528-bytes and an erase operation can be performed in ty pical 2ms on a 16K-bytes block. Data in the page can be read out at 42ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functi ons including pulse repetition, where required, and internal verifica- tion and margining of data. Even the write-intens ive systems can take advantage of the K9F1208X0C ′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K9F1208Q0C-DCBO | 3,654 | 2007+ | 索取報價 |