圖片僅供參考
製造商IC編號 | K9F1G08U0B-JIB0 |
廠牌 | SAMSUNG/三星 |
IC 類別 | FLASH-NAND |
IC代碼 | 128MX8 NAND SLC |
脚位/封装 | FBGA-63 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 2.7V~3.6V |
溫度規格 | -40 C~+85 C |
速度 | 25 NS |
標準包裝數量 | 960 |
標準外箱 | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Generation | 3rd Generation |
Pre Prog Version | None |
Classification | SLC Normal |
Cust Bad Block | Include Bad Block |
Mode | Normal |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
S34ML01G200BHI000 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
S34ML01G200BHI000 IC | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
S34ML01G200BHI003 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
S34ML01G200BHI500 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58BVG0S3HBAI4 | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58BVG0S3HBAI4 KIOXIA | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58BVG0S3HBAI4 REEL | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58BVG0S3HBAI4 TRAY | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58BVG0S3HBAI4-BDH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
TC58BVG0S3HBAI4JDH | BGA-63 | 3.3 V | 25 NS | -40 C~+85 C |