K9F1G08U0D-HIB0
產品概述
圖片僅供參考
| 製造商IC編號 | K9F1G08U0D-HIB0 |
| 廠牌 | SAMSUNG/三星 |
| IC 類別 | FLASH-NAND |
| IC代碼 | 128MX8 NAND SLC |
產品詳情
| 脚位/封装 | FBGA-63 |
| 外包裝 | TRAY |
| 無鉛/環保 | 無鉛/環保 |
| 電壓(伏) | 2.7V~3.6V |
| 溫度規格 | -40 C~+85 C |
| 速度 | 25 NS |
| 標準包裝數量 | |
| 標準外箱 | |
| Number Of Words | 128M |
| Bit Organization | x8 |
| Density | 1G |
| Generation | 5th Generation |
| Pre Prog Version | None |
| Classification | SLC Normal |
| Cust Bad Block | Include Bad Block |
| Mode | Normal |
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| MT29F1G08AACH4-ETC | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| MT29F1G08ABADAH4-IT | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| MT29F1G08ABADAH4-IT TR | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| MT29F1G08ABADAH4-IT:D | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| MT29F1G08ABADAH4-IT:D ROHS | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| MT29F1G08ABADAH4-IT:D TR | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| MT29F1G08ABADAH4-ITD | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| MT29F1G08ABADAH4-ITE | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| MT29F1G08ABADAH4-ITE:D | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |
| MT29F1G08ABADAH4-ITED | VFBGA-63 | 3.3 V | 25 NS | -40 C~+85 C |