圖片僅供參考
製造商IC編號 | K9K1G08ROB-JIBO |
廠牌 | SAMSUNG/三星 |
IC 類別 | FLASH-NAND |
IC代碼 | 128MX8 NAND SLC |
脚位/封装 | FBGA-63 |
外包裝 | TRAY |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | -40 C~+85 C |
速度 | 25 NS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Generation | 3rd Generation |
Pre Prog Version | Serial |
Classification | SLC DDP |
Cust Bad Block | Include Bad Block |
IC 編號 | 數量 | 生產年份 | |
---|---|---|---|
K9K1G08ROB-JIBO | 4,000 | 索取報價 | |
K9K1G08ROB-JIBO | 4,480 | 06+ | 索取報價 |
K9K1G08ROB-JIBO | 535 | 2008+ | 索取報價 |
K9K1G08ROB-JIBO | 5,000 | 索取報價 | |
K9K1G08ROB-JIBO | 500 | 2008+ | 索取報價 |
K9K1G08ROB-JIBO | 3,952 | 2007+ | 索取報價 |
K9K1G08ROB-JIBO | 4,000 | 2006+ | 索取報價 |
K9K1G08ROB-JIBO | 4,480 | 2006+ | 索取報價 |
K9K1G08ROB-JIBO | 4,885 | 06+ | 索取報價 |
K9K1G08ROB-JIBO | 4,880 | 2006+ | 索取報價 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
H27S1G8F2BFR-BI | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
H27S1G8F2BFR-BI NBSP | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
H27S1G8F2BFR-BIR | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
H27S1G8F2CFE-BI | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
H27S1G8F2CFR-BI | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
IS35MW01G084-BLA1 | VFBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F1G08R0A-/B-JIB | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F1G08R0A-JIB0000 | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F1G08R0A/B-JIB0 | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |
K9F1G08R0A/B-JIBO | FBGA-63 | 1.8 V | 25 NS | -40 C~+85 C |