圖片僅供參考
製造商IC編號 | K9WAG08U1A-IIBO |
廠牌 | SAMSUNG/三星 |
IC 類別 | FLASH-NAND |
IC代碼 | 2GX8 NAND SLC |
脚位/封装 | TLGA-52 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 2.7V-3.6V |
溫度規格 | -40 C~+85 C |
速度 | 25 NS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 2G |
Bit Organization | x8 |
Density | 16G |
Generation | 2nd Generation |
Pre Prog Version | Serial |
Classification | SLC 4 Die Stack |
Cust Bad Block | Include Bad Block |
Mode | Dual nCE & Dual R/nB |
GENERAL DESCRIPTION Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memo ry with spare 256M-bit. Its NAND cell provides the most cost- effective solution for the solid state application marke t. A program operation can be performed in typical 200 µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data i put/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verificatio n and margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0A′s extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
K9WAG08U1M-IIBOT | TLGA-52 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
K9WAG08U1MIIB0 | TLGA-52 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
K9WAGO8U1A-IIB0 | TLGA-52 | 2.7V-3.6V | 25 NS | -40 C~+85 C |
K9WAGO8U1A-IIBO | TLGA-52 | 2.7V-3.6V | 25 NS | -40 C~+85 C |