K9WAG08U1APCB

GENERAL DESCRIPTION Offered in 1G x 8bit, the K9K8G08U0A is a 8G-bit NAND Flash Memo ry with spare 256M-bit. Its NAND cell provides the most cost- effective solution for the solid state application marke t. A program operation can be performed in typical 200 µs on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data i put/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verificatio n and margining of data. Even the write-intensive systems can take advantage of the K9K8G08U0A′s extended reliability of 100K program/ erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K8G08U0A is an optimum solu- tion for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 8Gb stacked with two chip selects is also available in standard TSOPI package.

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