M29W040B-90N1
產品詳情
| 脚位/封装 | TSOP |
| 外包裝 | |
| 無鉛/環保 | 含鉛 |
| 電壓(伏) | 3.3 V |
| 溫度規格 | 0 C~+70 C |
| 速度 | 90 NS |
| 標準包裝數量 | |
| 標準外箱 |
SUMMARY DESCRIPTION The M29W040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W040B is fully backward compatible with the M29W040. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
FFFE/互通料號 (形式，腳位和功能對等)
| IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
|---|---|---|---|---|
| M29W040-70N1E | TSOP | 3.3 V | 90 NS | 0 C~+70 C |
| M29W040-90N1 | TSOP | 3.3 V | 90 NS | 0 C~+70 C |
| M29W040B-70N1E | TSOP | 3.3 V | 90 NS | 0 C~+70 C |
| M29W040B-90N1F | TSOP | 3.3 V | 90 NS | 0 C~+70 C |
| M29W040B-90N1MPT | TSOP | 3.3 V | 90 NS | 0 C~+70 C |
| M29W040B-90N1TE | TSOP | 3.3 V | 90 NS | 0 C~+70 C |
| M29W040B90N1-ST | TSOP | 3.3 V | 90 NS | 0 C~+70 C |
| M29W040B90N1T | TSOP | 3.3 V | 90 NS | 0 C~+70 C |
| M29W040B90N1TR #160 | TSOP | 3.3 V | 90 NS | 0 C~+70 C |