M29W200BB-90N1

產品概述

IC Picture

圖片僅供參考

製造商IC編號 M29W200BB-90N1
廠牌 MICRON/美光
IC 類別 FLASH-NOR
IC代碼 29LV200 BOTTOM
共通IC編號 M29W200BB-90N1-TR

產品詳情

脚位/封装 TSOP-48
外包裝
無鉛/環保 含鉛
電壓(伏) 2.7V~3.6V
溫度規格 0 C~+70 C
速度 90 NS
標準包裝數量
標準外箱

SUMMARY DESCRIPTION The M29W200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W200B is fully backward compatible with the M29W200. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

供應鏈有貨

IC 編號 數量 生產年份
M29W200BB-90N1 16,470 索取報價
M29W200BB-90N1 476 索取報價
M29W200BB-90N1 84 01 索取報價
M29W200BB-90N1 3,456 405 索取報價
M29W200BB-90N1 576 04 索取報價
M29W200BB-90N1 576 2004 索取報價
M29W200BB-90N1 17 索取報價
M29W200BB-90N1 576 XX 索取報價
M29W200BB-90N1 2,001 索取報價
M29W200BB-90N1 600 索取報價

FFFE/互通料號 (形式,腳位和功能對等)

IC 編號 脚位/封装 電壓(伏) 速度 溫度規格
M29W200BB-90N1-TR X TSOP-48 2.7V~3.6V 90 NS 0 C~+70 C