M29W200BT-55N6T

產品概述

IC Picture

圖片僅供參考

製造商IC編號 M29W200BT-55N6T
廠牌 MICRON/美光
IC 類別 FLASH-NOR
IC代碼 29LV200 TOP

產品詳情

脚位/封装 TSOP-48
外包裝 TAPE ON REEL
無鉛/環保 含鉛
電壓(伏) 2.7V~3.6V
溫度規格 -40 C~+85 C
速度 55 NS
標準包裝數量
標準外箱

SUMMARY DESCRIPTION The M29W200B is a 2 Mbit (256Kb x8 or 128Kb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29W200B is fully backward compatible with the M29W200. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

FFFE/互通料號 (形式,腳位和功能對等)

IC 編號 脚位/封装 電壓(伏) 速度 溫度規格
M29W200BT-55/70/90N6T TSOP-48 2.7V~3.6V 55 NS -40 C~+85 C
M29W200BT-55N6 TSOP-48 2.7V~3.6V 55 NS -40 C~+85 C