MT29F2G09ABBEAHC:E

產品概述

IC Picture

圖片僅供參考

製造商IC編號 MT29F2G09ABBEAHC:E
廠牌 MICRON/美光
IC 類別 FLASH-NAND
IC代碼 1GX8 NAND SLC

產品詳情

脚位/封装 VFBGA-63
外包裝
無鉛/環保 含鉛
電壓(伏) 1.8 V
溫度規格 0 C~+70 C
速度 1 MHZ
標準包裝數量
標準外箱
Density 2G
Production Status Production
Package Material Pb-free
Interface Async only
Level SLC
Speed Grade Async only
Design Revision E
Package VFBGA(63-ball , 10.5 x 13 x 1.0)
Classification 1-1-1-1 (Die-nCE-RnB-IO Channels)

General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization. This device has an internal 4-bit ECC that can be enabled using the GET/SET features. See Internal ECC and Spare Area Mapping for ECC for more information.

供應鏈有貨

IC 編號 數量 生產年份
MT29F2G09ABBEAHC:E 0 索取報價

FFFE/互通料號 (形式,腳位和功能對等)

IC 編號 脚位/封装 電壓(伏) 速度 溫度規格
MT29F8G08ABBCAH4 VFBGA-63 1.8 V 1 MHZ 0 C~+70 C
MT29F8G08ABBCAH4:C VFBGA-63 1.8 V 1 MHZ 0 C~+70 C
MT29F8G08ABBCAH4:C TR VFBGA-63 1.8 V 1 MHZ 0 C~+70 C
MT29F8G08ABBCAH4C VFBGA-63 1.8 V 1 MHZ 0 C~+70 C
MT29F8G08ABBCAH4ES:C VFBGA-63 1.8 V 1 MHZ 0 C~+70 C