| 脚位/封装 |
FBGA-168
|
| 外包裝 |
|
| 無鉛/環保 |
無鉛/環保
|
| 電壓(伏) |
1.35V
|
| 溫度規格 |
0 C~+85 C
|
| 速度 |
1600 MBPS
|
| 標準包裝數量 |
|
| 標準外箱 |
|
| Number Of Words |
32M
|
| Bit Organization |
x18
|
| Density |
576M
|
| Max Clock Frequency |
800 MHz with (t)RC (MIN) 10ns
|
| Production Status |
Production
|
| Product Family |
RLDRAM® 3 Memory
|
| Version |
R
|
| Die Revision |
A
|
General Description
The Micron RLDRAM 3 is a high-speed memory device designed for high-bandwidth
data storage—telecommunications, networking, cache applications, etc. The chip’s 16bank architecture is optimized for sustainable high-speed operation.
The DDR I/O interface transfers two data bits per clock cycle at the I/O balls. Output
data is referenced to the READ strobes.
Commands, addresses, and control signals are also registered at every positive edge of
the differential input clock, while input data is registered at both positive and negative
edges of the input data strobes.
Read and write accesses to the RL3 device are burst-oriented. The burst length (BL) is
programmable to 2, 4, or 8 by a setting in the mode register.
The device is supplied with 1.35V for the core and 1.2V for the output drivers. The 2.5V
supply is used for an internal supply.
Bank-scheduled refresh is supported with the row address generated internally.
The 168-ball FBGA package is used to enable ultra-high-speed data transfer rates.
