MT48LC16M16A2TG-8C IT

產品概述

IC Picture

圖片僅供參考

製造商IC編號 MT48LC16M16A2TG-8C IT
廠牌 MICRON/美光
IC 類別 SDRAM
IC代碼 16MX16 SD

產品詳情

脚位/封装 TSOP2(54)
外包裝
無鉛/環保 含鉛
電壓(伏) 3.3 V
溫度規格 -40 C~+85 C
速度 133 MHZ
標準包裝數量
標準外箱
Number Of Words 16M
Bit Organization x16
Density 256M
Max Clock Frequency 125 MHz
Production Status Production
Package Material Lead Plating
Product Family SDRAM/Mobile LPSDR
Version A2
Die Revision C

General Description The 256Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is internally configured as a quad-bank DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the x4’s 67,108,864-bit banks is organized as 8192 rows by 2048 columns by 4 bits. Each of the x8’s 67,108,864-bit banks is organized as 8192 rows by 1024 columns by 8 bits. Each of the x16’s 67,108,864-bit banks is organized as 8192 rows by 512 columns by 16 bits. Read and write accesses to the SDRAM are burst-oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of an ACTIVE command, which is then followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BA[1:0] select the bank; A[12:0] select the row). The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst access. The SDRAM provides for programmable read or write burst lengths (BL) of 1, 2, 4, or 8 locations, or the full page, with a burst terminate option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The 256Mb SDRAM uses an internal pipelined architecture to achieve high-speed operation. This architecture is compatible with the 2n rule of prefetch architectures, but it also allows the column address to be changed on every clock cycle to achieve a highspeed, fully random access. Precharging one bank while accessing one of the other three banks will hide the PRECHARGE cycles and provide seamless, high-speed, randomaccess operation. The 256Mb SDRAM is designed to operate in 3.3V memory systems. An auto refresh mode is provided, along with a power-saving, power-down mode. All inputs and outputs are LVTTL-compatible. SDRAMs offer substantial advances in DRAM operating performance, including the ability to synchronously burst data at a high data rate with automatic column-address generation, the ability to interleave between internal banks to hide precharge time, and the capability to randomly change column addresses on each clock cycle during a burst access.

FFFE/互通料號 (形式,腳位和功能對等)

IC 編號 脚位/封装 電壓(伏) 速度 溫度規格
EDS2516ADTA-75TI-E TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
EDS2516APTA-75TI TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
EDS2516APTA-75TI-E TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
EDS2516APTA7ATI TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS42S16160C-75TLI TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS42S16160D-75ETLI TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS45S16160C-75TLA1 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS45S16160C-75TLA1-TR TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS45S16160D-75ETLA1 TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C
IS45S16160D-75ETLA1-TR TSOP2(54) 3.3 V 133 MHZ -40 C~+85 C