脚位/封装 | FBGA-90 |
外包裝 | |
無鉛/環保 | 含鉛 |
電壓(伏) | 3.3 V |
溫度規格 | -40 C~+85 C |
速度 | 166 MHZ |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 4M |
Bit Organization | x32 |
Density | 128M |
Max Clock Frequency | 200 MHz+ |
Production Status | Production |
Product Family | SDRAM/Mobile LPSDR |
Version | B2 |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
EDS1232AASE-60TI-E | FBGA-90 | 3.3 V | 166 MHZ | -40 C~+85 C |
EDS1232AASE-60TI-E 392,820PC | FBGA-90 | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32400-6BLI | FBGA-90 | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32400B-6BLI | FBGA-90 | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32400B-6BLI OR 7BLI | FBGA-90 | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32400D-6BI | FBGA-90 | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32400D-6BLI | FBGA-90 | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32400E-6BLI | FBGA-90 | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32400F-6BI | FBGA-90 | 3.3 V | 166 MHZ | -40 C~+85 C |
IS42S32400F-6BI-TR | FBGA-90 | 3.3 V | 166 MHZ | -40 C~+85 C |