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K4X28163PN-TGC3T00

K4X28163PN-TGC3T00-要錢不要貨,清倉價!


數量
387,880
 
生產年份 11+
IC代碼 8MX16 MDDR1
脚位/封装 FBGA-60
外包裝 TAPE ON REEL
電壓(伏) 1.8 V
標準包裝數量 2000
Alternate Names K4X28163PN-TGC3T
K4X28163PN-TGC3
廠牌 SAMSUNG/三星
IC 類別 DDR1 MOBILE
無鉛/環保 無鉛/環保
溫度規格 -25°C~+70°C
速度 133 MHZ

8M x16 Mobile-DDR SDRAM
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• LDM/UDM for write masking only.
• Auto refresh duty cycle
- 15.6us for -25°C to 85°C



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