| IC43DR16320D-25DBL |
ISSI |
DDR2 SDRAM |
28.158
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 2090 pcs |
| TC551001CFI-70L |
TOSHIBA |
SRAM-ASYNC |
2.056
|
SRAM-ASYNC / 128KX8 ASYNC / SOP-32 / 70 NS / -40 C~+85 C / Leaded / 5.0 V / TUBE / 400 pcs |
| K9F1208U0C-JIB0T00 |
SAMSUNG |
FLASH-NAND |
28.000
|
FLASH-NAND / 64MX8 NAND SLC / FBGA-63 / 42 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL / EOL / 2000 pcs 1.2 kg 36*35*7 cm |
| K4X28163PN-TGC3T00 |
SAMSUNG |
LPDDR1 MOBILE |
161.880
|
LPDDR1 MOBILE / 8MX16 LPDDR1 / FBGA-60 / 133 MHZ / -25 C~+70 C / RoHS / 1.8 V / TAPE ON REEL / EOL / 2000 pcs 1.0 kg 36*35*7 cm |
| IS43DR16160A-25EBLI |
ISSI |
DDR2 SDRAM |
48.172
|
DDR2 SDRAM / 16MX16 DDR2 / FBGA-84 / 800 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 2090 pcs |
| K4E151612D-JC60 |
SAMSUNG |
DRAM |
7.201
|
DRAM / 1MX16 EDO / SOJ-42 / 60 NS / 0 C~+85 C / Leaded / 3.3 V / TAPE ON REEL / EOL / 1000 pcs 2.0 kg |
| IS41LV16100S-50K |
ISSI |
DRAM |
6.982
|
DRAM / 1MX16 EDO / SOJ-42 / 50 NS / 0 C~+70 C / Leaded / 3.3 V / TUBE / EOL / 1600 pcs |
| M27C200170XF1(ROHS) |
STM |
EPROM |
1.280
|
EPROM / 27C020 / CDIP-32 / 70 NS / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 240 pcs 3.11 kg 55*9*7 cm |
| TC58NVM9S3ETA00 |
KIOXIA |
FLASH-NAND |
57.060
|
FLASH-NAND / 64MX8 NAND SLC / TSOP-48 / 25 NS / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 480 pcs |
| M28W320CT-90N6 |
MICRON |
FLASH-NOR |
18.422
|
FLASH-NOR / 28W320 / TSOP-48 / 90 NS / -40 C~+85 C / Leaded / 2.7V~3.6V / TRAY / EOL / 576 pcs 1.67 kg 40*20*11 cm |
| EC2SM-15.000MTR |
ECLIPTEK |
CRYSTAL |
12.000
|
CRYSTAL / EC2SM / HC49-UP / Leaded / TAPE ON REEL / 1000 pcs |
| MX30LF1G18AC-TI |
MACRONIX/MXIC |
FLASH-NAND |
10
|
FLASH-NAND / 128MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 2.7V~3.6V / TRAY / 960 pcs 2.08 kg 38*16*9 cm |
| IS42S32160F-7TLI |
ISSI |
SDRAM |
213
|
SDRAM / 16MX32 SD / TSOP2(86) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| EN29F040A-70JIP |
EON |
FLASH-NOR |
10
|
FLASH-NOR / 29F040 / PLCC-32 / 70 NS / -40 C~+85 C / RoHS / 5.0 V |
| S34ML02G200TFI000 |
SKYHIGH |
FLASH-NAND |
30.720
|
FLASH-NAND / 256MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs |
| XA6SLX9-2FTG256Q0100 |
AMD XILINX |
FPGA |
4.000
|
FPGA / 6SLX9 / FBGA-256 / 1080 MHZ / -40 C~+125 C / RoHS / 1.14 V~1.26 V / TAPE ON REEL / 1000 pcs |
| IS42S32800B-6B |
ISSI |
SDRAM |
5.974
|
SDRAM / 8MX32 SD / BGA-90 / 166 MHZ / 0 C~+85 C / Leaded / 3.3 V / TRAY |
| K4X1G163PQ-FGC3000 |
SAMSUNG |
LPDDR1 MOBILE |
3.158
|
LPDDR1 MOBILE / 64MX16 LPDDR1 / FBGA-60 / 133 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1120 pcs 2.3 kg 19*38*12 cm |
| STTH8R04DI |
STM |
RECOVERY DIODE |
9.000
|
RECOVERY DIODE / 8R04 / TO-220-3 / 120 A / -40 C~+175 C / RoHS / 400 V / TUBE / 1000 pcs |
| IS42S32160F-7TL |
ISSI |
SDRAM |
627
|
SDRAM / 16MX32 SD / TSOP2(86) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 1080 pcs |
| H5PS5182KFR-Y5C |
SK HYNIX |
DDR2 SDRAM |
197.129
|
DDR2 SDRAM / 64MX8 DDR2 / FBGA-60 / 333 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / 1600 pcs 2.0 kg 9*11*37 cm |
| K4S560832N-LC75000 |
SAMSUNG |
SDRAM |
2.522
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 960 pcs 2.0 kg 38*19*11 cm |
| MT46V64M4P-6T:G |
MICRON |
DDR1 SDRAM |
14.214
|
DDR1 SDRAM / 64MX4 DDR1 / TSOP-66 / 167 MHZ / 0 C~+85 C / RoHS / 2.5 V / TAPE ON REEL / 1000 pcs 1.6 kg 37*35*8 cm |
| MT46V8M16TG-6T:D |
MICRON |
DDR1 SDRAM |
10.970
|
DDR1 SDRAM / 8MX16 DDR1 / TSOP-66 / 166 MHZ / 0 C~+85 C / Leaded / 2.5 V / TRAY / 1000 pcs 2.67 kg 37*19*12 cm |
| MT46V8M16TG-6T:D TR |
MICRON |
DDR1 SDRAM |
29.000
|
DDR1 SDRAM / 8MX16 DDR1 / TSOP-66 / 166 MHZ / 0 C~+85 C / Leaded / 2.5 V / TAPE ON REEL / EOL / 1000 pcs 1.54 kg 37*35*8 cm |