| MT29F64G08AECABH1-10Z:A |
MICRON |
FLASH-NAND |
1.322
|
FLASH-NAND / 8GX8 NAND SLC / VBGA-100 / 1 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / EOL / 1120 pcs |
| L9952XPTR-S |
STM |
PMIC/POWER MANAGEMENT |
1.000
|
PMIC/POWER MANAGEMENT / L9952 / PSSO-36 / RoHS / TAPE ON REEL |
| MX25L12833FM2I-10G |
MACRONIX/MXIC |
FLASH-SPI |
15
|
FLASH-SPI / 128MB SPI / SOP-8 / 104 MHZ / -40 C~+85 C / RoHS / 3.3 V / TUBE / 92 pcs |
| K4X1G323PF-8GD8000 |
SAMSUNG |
LPDDR1 MOBILE |
4.480
|
LPDDR1 MOBILE / 32MX32 LPDDR1 / FBGA-90 / 200 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / 1120 pcs |
| K4F6E304HB-MGCJ000 |
SAMSUNG |
LPDDR4 MOBILE |
8.860
|
LPDDR4 MOBILE / 512MX32 LPDDR4 / FBGA-200 / 1866 MHZ / -25 C~+85 C / RoHS / 1.1 V / TRAY / 1280 pcs 2.0 kg 38*19*11 cm |
| K4B4G0846D-BCK00CV |
SAMSUNG |
DDR3 SDRAM |
160
|
DDR3 SDRAM / 512MX8 DDR3 / FBGA-78 / 800 MHZ / 0 C~+95 C / RoHS / 1.5 V / TRAY / EOL / 1280 pcs 2.0 kg 11*38*19 cm |
| M27C200170XF1(ROHS) |
STM |
EPROM |
1.280
|
EPROM / 27C020 / CDIP-28 / 70 NS / 0 C~+70 C / RoHS / 5 V / TUBE / 240 pcs 3.11 kg 55*9*7 cm |
| TC58NVM9S3ETA00 |
KIOXIA |
FLASH-NAND |
57.060
|
FLASH-NAND / 64MX8 NAND SLC / TSOP-48 / 25 NS / 0 ~ 70 C / RoHS / 2.7V-3.6V / TRAY / EOL / 480 pcs |
| K4S643232H-UC70T00 |
SAMSUNG |
SDRAM |
4.000
|
SDRAM / 2MX32 SD / TSOP2(86) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 2000 pcs 2.4 kg 36*35*7 cm |
| KLM4G1YEMD-B031 |
SAMSUNG |
FLASH-EMMC |
12
|
FLASH-EMMC / 4GB EMMC / FBGA-153 / 52MHZ / -25 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1120 pcs |
| MT41J64M16JT-125:G |
MICRON |
DDR3 SDRAM |
100
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 800 MHZ / 0 C~+95 C / RoHS / 1.5 V / TRAY / 1000 pcs |
| S29PL064J70BFI122 |
CYPRESS |
FLASH-NOR |
291
|
FLASH-NOR / 29PL064 / FBGA-48 / 70 NS / -40 C~+85 C / RoHS / 3.0V / TAPE ON REEL |
| M24C08-FMN6TP |
STM |
EEPROM |
162
|
EEPROM / 24C08 / SO-8 / -40 C~+85 C / Leaded / 1.8V-5.5 V / TAPE ON REEL |
| MTFC8GAKAJCN-1M WT |
MICRON |
FLASH-EMMC |
10
|
FLASH-EMMC / 8GB EMMC / FBGA-153 / 52MHZ / -25 C~+85 C / RoHS / 3.3 V / TRAY / 1520 pcs |
| K4T1G164QG-BCF7000 |
SAMSUNG |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 400 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY / 1280 pcs |
| AT24C08D-SSHM-T |
MICROCHIP |
EEPROM |
82
|
EEPROM / 24C08 / SOIC-8 / 1 MHZ / -40 C~+85 C / Leaded / 1.7V-3.6V / TAPE ON REEL |
| MT47H32M16HR-25E:G |
MICRON |
DDR2 SDRAM |
100
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 400 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1000 pcs |
| MT47H64M16NF-25:E:M |
MICRON |
DDR2 SDRAM |
100
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 400 MHZ / 0 C~+85 C / RoHS / 1.8 V |
| THGBMHG6C1LBAIL |
TOSHIBA |
FLASH-EMMC |
10
|
FLASH-EMMC / 8GB EMMC / FBGA-153 / 52 MHZ / -25 C~+85 C / RoHS / 3.3 V / TRAY / 760 pcs |
| H5PS1G63KFR-S6C |
SK HYNIX |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 400 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL |
| W971GG6SB25I |
WINBOND |
DDR2 SDRAM |
26
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MHZ / -40 C~+95 C / RoHS / 1.8 V / TAPE ON REEL / 209 pcs |
| H5PS5162KFR-Y5C |
SK HYNIX |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 333 MHZ / 0 C~+95 C / RoHS / 1.8 V / TRAY / EOL |
| K4T51163QQ-BCE6000 |
SAMSUNG |
DDR2 SDRAM |
200
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 333 MHZ / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs |
| 24AA08ISN |
MICROCHIP |
EEPROM |
282
|
EEPROM / 24C08 / SOIC-8 / RoHS / 1.7V |
| MX25L12835EMI-10G |
MACRONIX/MXIC |
FLASH-SPI |
476
|
FLASH-SPI / 128MB SPI / SOP-16 / 104 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 44 pcs |