MT29F4G08ABBEAH4:E

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Produktübersicht

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Hersteller-Nummer MT29F4G08ABBEAH4:E
Hersteller MICRON
Produktkategorie FLASH-NAND
IC-Code 512MX8 NAND SLC
Andere Bezeichnungen MT29F4G08ABBEAH4:ETR
MT29F4G08ABBEAH4E

Produktbeschreibung

Gehäuse VFBGA-63
Verpackung TAPE ON REEL
RoHS RoHS
Spannungsversorgung 1.8 V
Betriebstemperatur 0 C~+70 C
Geschwindigkeit 25 NS
Standard Stückzahl 1000
Abmessungen Karton
Number Of Words 512M
Bit Organization x8
Density 4G
Production Status Production
Package Material Pb-free
Interface Async only
Level SLC
Speed Grade Async only
Design Revision E
Package VFBGA(63-ball , 9 x 11 x 1.0)
Classification 1-1-1-1 (Die-nCE-RnB-IO Channels)

General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.

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Teilenummer Menge Stückpreis (USD) Datecode Anmerkung
MT29F4G08ABBEAH4:E 14.000 1742 Auf Lager Anfrage senden
MT29F4G08ABBEAH4:E 14.000 1742 Auf Lager Anfrage senden

Verfügbare Angebote

Teilenummer Menge Datecode
MT29F4G08ABBEAH4:E 1.260 Anfrage senden
MT29F4G08ABBEAH4:E 14.000 17+ Anfrage senden
MT29F4G08ABBEAH4:E 463 18+ Anfrage senden
MT29F4G08ABBEAH4:E 16.000 17+ Anfrage senden
MT29F4G08ABBEAH4:E 14.000 14+ Anfrage senden
MT29F4G08ABBEAH4:E 5.000 14+ Anfrage senden
MT29F4G08ABBEAH4:E 200 Anfrage senden
MT29F4G08ABBEAH4:E 3.000 2021+ Anfrage senden
MT29F4G08ABBEAH4:E 1.260 Anfrage senden
MT29F4G08ABBEAH4:E 182 Anfrage senden

Cross Reference

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
MT29F4G08ABBDAH4 VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH4:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH4:D TR VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH4D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH4DTR VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBEAH4 VFBGA-63 1.8 V 25 NS 0 C~+70 C

FFFE (Form, Fit & Functional Equivalents)

Teilenummer Gehäuse Spannungsversorgung Geschwindigkeit Betriebstemperatur
MT29F4G08ABBDAH4ES:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH5:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHC VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHC:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHC:D TR VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHCD VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHCES:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBEAH4ES:E VFBGA-63 1.8 V 25 NS 0 C~+70 C
TH58NYG2S3HBA14 BGA-63 1.8 V 25 NS 0 C~+70 C