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制造商IC编号 | MT29F4G08ABBEAH4:E |
厂牌 | MICRON/美光 |
IC 类别 | FLASH-NAND |
IC代码 | 512MX8 NAND SLC |
共通IC编号 | MT29F4G08ABBEAH4:ETR |
MT29F4G08ABBEAH4E |
脚位/封装 | VFBGA-63 |
外包装 | TAPE ON REEL |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+70 C |
速度 | 25 NS |
标准包装数量 | 1000 |
标准外箱 | |
Number Of Words | 512M |
Bit Organization | x8 |
Density | 4G |
Production Status | Production |
Package Material | Pb-free |
Interface | Async only |
Level | SLC |
Speed Grade | Async only |
Design Revision | E |
Package | VFBGA(63-ball , 9 x 11 x 1.0) |
Classification | 1-1-1-1 (Die-nCE-RnB-IO Channels) |
General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
MT29F4G08ABBEAH4:E | 1,260 | 索取报价 | |
MT29F4G08ABBEAH4:E | 14,000 | 17+ | 索取报价 |
MT29F4G08ABBEAH4:E | 463 | 18+ | 索取报价 |
MT29F4G08ABBEAH4:E | 16,000 | 17+ | 索取报价 |
MT29F4G08ABBEAH4:E | 14,000 | 14+ | 索取报价 |
MT29F4G08ABBEAH4:E | 5,000 | 14+ | 索取报价 |
MT29F4G08ABBEAH4:E | 200 | 索取报价 | |
MT29F4G08ABBEAH4:E | 3,000 | 2021+ | 索取报价 |
MT29F4G08ABBEAH4:E | 1,260 | 索取报价 | |
MT29F4G08ABBEAH4:E | 182 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT29F4G08ABBDAH4 | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBDAH4:D | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBDAH4:D TR | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBDAH4D | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBDAH4DTR | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBEAH4 | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT29F4G08ABBDAH4ES:D | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBDAH5:D | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBDAHC | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBDAHC:D | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBDAHC:D TR | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBDAHCD | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBDAHCES:D | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
MT29F4G08ABBEAH4ES:E | VFBGA-63 | 1.8 V | 25 NS | 0 C~+70 C |
TH58NYG2S3HBA14 | BGA-63 | 1.8 V | 25 NS | 0 C~+70 C |