MT29F4G08ABBEAH4:E

AB库存

产品概述

IC Picture

图片仅供参考

制造商IC编号 MT29F4G08ABBEAH4:E
厂牌 MICRON/美光
IC 类别 FLASH-NAND
IC代码 512MX8 NAND SLC
共通IC编号 MT29F4G08ABBEAH4:ETR
MT29F4G08ABBEAH4E

产品详情

脚位/封装 VFBGA-63
外包装 TAPE ON REEL
无铅/环保 无铅/环保
电压(伏) 1.8 V
温度规格 0 C~+70 C
速度 25 NS
标准包装数量 1000
标准外箱
Number Of Words 512M
Bit Organization x8
Density 4G
Production Status Production
Package Material Pb-free
Interface Async only
Level SLC
Speed Grade Async only
Design Revision E
Package VFBGA(63-ball , 9 x 11 x 1.0)
Classification 1-1-1-1 (Die-nCE-RnB-IO Channels)

General Description Micron NAND Flash devices include an asynchronous data interface for high-performance I/O operations. These devices use a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND Flash die. A NAND Flash die is the minimum unit that can independently execute commands and report status. A NAND Flash die, in the ONFI specification, is referred to as a logical unit (LUN). There is at least one NAND Flash die per chip enable signal. For further details, see Device and Array Organization.

库存

IC 编号 数量 单价 (USD) 生产年份 附记
MT29F4G08ABBEAH4:E 14,000 1742 AB库存 索取报价
MT29F4G08ABBEAH4:E 14,000 1742 AB库存 索取报价

供应链有货

IC 编号 数量 生产年份
MT29F4G08ABBEAH4:E 1,260 索取报价
MT29F4G08ABBEAH4:E 14,000 17+ 索取报价
MT29F4G08ABBEAH4:E 463 18+ 索取报价
MT29F4G08ABBEAH4:E 16,000 17+ 索取报价
MT29F4G08ABBEAH4:E 14,000 14+ 索取报价
MT29F4G08ABBEAH4:E 5,000 14+ 索取报价
MT29F4G08ABBEAH4:E 200 索取报价
MT29F4G08ABBEAH4:E 3,000 2021+ 索取报价
MT29F4G08ABBEAH4:E 1,260 索取报价
MT29F4G08ABBEAH4:E 182 索取报价

可替代IC编号

IC 编号 脚位/封装 电压(伏) 速度 温度规格
MT29F4G08ABBDAH4 VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH4:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH4:D TR VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH4D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH4DTR VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBEAH4 VFBGA-63 1.8 V 25 NS 0 C~+70 C

FFFE/互通料号 (形式,腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
MT29F4G08ABBDAH4ES:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAH5:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHC VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHC:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHC:D TR VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHCD VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBDAHCES:D VFBGA-63 1.8 V 25 NS 0 C~+70 C
MT29F4G08ABBEAH4ES:E VFBGA-63 1.8 V 25 NS 0 C~+70 C
TH58NYG2S3HBA14 BGA-63 1.8 V 25 NS 0 C~+70 C