| Gehäuse |
FBGA-96
|
| Verpackung |
TRAY
|
| RoHS |
RoHS
|
| Spannungsversorgung |
1.5 V
|
| Betriebstemperatur |
0 C~+95 C
|
| Geschwindigkeit |
1066 MBPS
|
| Standard Stückzahl |
|
| Abmessungen Karton |
|
| Number Of Words |
128M
|
| Bit Organization |
x16
|
| Density |
2G
|
| Operating Temperature |
commercial temperature(0°C~85°C) & normal power
|
| Package Material |
lead & halogen free(ROHS compliant)
|
| Hynix Memory |
H
|
| Die Generation |
3rd
|
| No Of Banks |
8 banks
|
| Product Family |
DRAM
|
| Shipping Method |
tray
|
Description
The H5TQ2G43BFR-xxC, H5TQ2G83BFR-xxC and H5TQ2G63BFR-xxC are a 2,147,483,648-bit CMOS Double
Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires
large memory density and high bandwidth. Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations
referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched
on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are
sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched
to achieve very high bandwidth.
