H5TQ2G63BFR-G7C

产品概述

IC Picture

图片仅供参考

制造商IC编号 H5TQ2G63BFR-G7C
厂牌 SK HYNIX/海力士
IC 类别 DDR3 SDRAM
IC代码 128MX16 DDR3
共通IC编号 H5TQ2G63BFR-G7C 2G

产品详情

脚位/封装 FBGA-96
外包装 TRAY
无铅/环保 无铅/环保
电压(伏) 1.5 V
温度规格 0 C~+95 C
速度 1066 MBPS
标准包装数量
标准外箱
Number Of Words 128M
Bit Organization x16
Density 2G
Operating Temperature commercial temperature(0°C~85°C) & normal power
Package Material lead & halogen free(ROHS compliant)
Hynix Memory H
Die Generation 3rd
No Of Banks 8 banks
Product Family DRAM
Shipping Method tray

Description The H5TQ2G43BFR-xxC, H5TQ2G83BFR-xxC and H5TQ2G63BFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.

供应链有货

IC 编号 数量 生产年份
H5TQ2G63BFR-G7C 5,660 索取报价
H5TQ2G63BFR-G7C 0 索取报价
H5TQ2G63BFR-G7C 2G 14,000 索取报价
H5TQ2G63BFR-G7C 10,000 11+ 索取报价
H5TQ2G63BFR-G7C 100 索取报价
H5TQ2G63BFR-G7C 10,000 索取报价
H5TQ2G63BFR-G7C 791 索取报价
H5TQ2G63BFR-G7C 3,028 11+ 索取报价
H5TQ2G63BFR-G7C 50 索取报价
H5TQ2G63BFR-G7C 30,400 索取报价

FFFE/互通料号 (形式,腳位和功能对等)

IC 编号 脚位/封装 电压(伏) 速度 温度规格
H5TQ2G63DFR-G7C FBGA-96 1.5 V 1066 MBPS 0 C~+95 C
NT5CB128M16BP-BE FBGA-96 1.5 V 1066 MBPS 0 C~+95 C