K4A4G165WG-BCWET0P
Produktübersicht
Bilder dienen nur der Illustration
| Hersteller-Nummer | K4A4G165WG-BCWET0P |
| Hersteller | SAMSUNG |
| Produktkategorie | DDR4 SDRAM |
| IC-Code | 256MX16 DDR4 |
Produktbeschreibung
| Gehäuse | FBGA-96 |
| Verpackung | |
| RoHS | Leaded |
| Spannungsversorgung | 1.2 V |
| Betriebstemperatur | 0 C~+85 C |
| Geschwindigkeit | 2666 MBPS |
| Standard Stückzahl | |
| Abmessungen Karton | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4Gb |
| Internal Banks | 16 Banks |
| Power | Normal Power |
| Generation | 8th Generation |
Verfügbare Angebote
| Teilenummer | Menge | Datecode | |
|---|---|---|---|
| K4A4G165WG-BCWET0P | 0 | Anfrage senden | |
| K4A4G165WG-BCWET0P | 10.000 | 24+ | Anfrage senden |
FFFE (Form, Fit & Functional Equivalents)
| Teilenummer | Gehäuse | Spannungsversorgung | Geschwindigkeit | Betriebstemperatur |
|---|---|---|---|---|
| H5AN4G6NAFR-VJC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN4G6NAFR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN4G6NBJR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN4G6NBJR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN4G6NBJR-VKIR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN4G6NBJR-VKKR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| IS43QR16256B-075UB | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| IS43QR16256B-075UBL | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| IS43QR16256B-075UBL-TR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| K4A4G1646F-BCTD | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |