图片仅供参考
| 制造商IC编号 | K4A4G165WG-BCWET0P |
| 厂牌 | SAMSUNG/三星 |
| IC 类别 | DDR4 SDRAM |
| IC代码 | 256MX16 DDR4 |
| 脚位/封装 | FBGA-96 |
| 外包装 | |
| 无铅/环保 | 含铅 |
| 电压(伏) | 1.2 V |
| 温度规格 | 0 C~+85 C |
| 速度 | 2666 MBPS |
| 标准包装数量 | |
| 标准外箱 | |
| Number Of Words | 256M |
| Bit Organization | x16 |
| Density | 4Gb |
| Internal Banks | 16 Banks |
| Power | Normal Power |
| Generation | 8th Generation |
| IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
|---|---|---|---|---|
| H5AN4G6NAFR-VJC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN4G6NAFR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN4G6NBJR-VKC | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN4G6NBJR-VKCR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN4G6NBJR-VKIR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| H5AN4G6NBJR-VKKR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| IS43QR16256B-075UB | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| IS43QR16256B-075UBL | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| IS43QR16256B-075UBL-TR | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |
| K4A4G1646F-BCTD | FBGA-96 | 1.2 V | 2666 MBPS | 0 C~+85 C |